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MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ≥ 10μmKURTZ, S. R; BIELEFELD, R. M; ZIPPERIAN, T. E et al.Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S24-S26, issn 0268-1242Conference Paper

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